Abstract
A theoretical analysis is made of the evolution of the defect structure in silicon carbide (6H-SiC) implanted with N+ and Al+ ions of various energies. Satisfactory agreement was achieved between the calculated defect distributions and the experimental data. The following kinetic parameters of silicon carbide were estimated numerically: the migration energy of interstitial silicon atoms and the recombination parameters of vacancies and interstitial sites in the carbon and silicon subsystems.
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Pis’ma Zh. Tekh. Fiz. 24, 39–43 (January 12, 1998)
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Kulikov, D.V., Trushin, Y.V., Yankov, R.A. et al. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions. Tech. Phys. Lett. 24, 17–19 (1998). https://doi.org/10.1134/1.1261975
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DOI: https://doi.org/10.1134/1.1261975