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Study of the growth of YBa2Cu3O7−x films on a Al2O3 single crystal with a CeO2 buffer sublayer

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Abstract

Superconducting YBa2Cu3O7−x films were prepared by magnetron sputtering on Al2O3 single crystals with a CeO2 sublayer. Scattering of moderate-energy ions and x-ray diffraction were used to show that the films exhibit good single-crystal properties over the entire thickness up to 2.6 μm. The hypothesis is advanced that the indentations formed by the growth of films above “extraneous” phase grains may act as defect sinks.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    V. V. Afrosimov, E. K. Gol’man, R. N. Il’in, M. N. Panov, D. A. Plotkin, S. V. Razumov, V. I. Sakharov & I. T. Serenkov

  2. St. Petersburg

    V. V. Afrosimov, E. K. Gol’man, R. N. Il’in, M. N. Panov, D. A. Plotkin, S. V. Razumov, V. I. Sakharov, I. T. Serenkov & A. V. Tumarkin

Authors
  1. V. V. Afrosimov
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  2. E. K. Gol’man
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  3. R. N. Il’in
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  4. M. N. Panov
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  5. D. A. Plotkin
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  6. S. V. Razumov
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  7. V. I. Sakharov
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  8. I. T. Serenkov
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  9. A. V. Tumarkin
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Additional information

Pis’ma Zh. Tekh. Fiz. 24, 91–95 (January 12, 1998)

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Afrosimov, V.V., Gol’man, E.K., Il’in, R.N. et al. Study of the growth of YBa2Cu3O7−x films on a Al2O3 single crystal with a CeO2 buffer sublayer. Tech. Phys. Lett. 24, 41–42 (1998). https://doi.org/10.1134/1.1261985

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  • DOI: https://doi.org/10.1134/1.1261985

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