Abstract
Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells.
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Pis’ma Zh. Tekh. Fiz. 24, 81–87 (December 12, 1998)
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Egorov, A.Y., Zhukov, A.E., Kovsh, A.R. et al. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Tech. Phys. Lett. 24, 942–944 (1998). https://doi.org/10.1134/1.1262326
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DOI: https://doi.org/10.1134/1.1262326