Abstract
The electric conductivity and photoconductivity of μc-Si: H films weakly doped with boron increase upon exposure of the samples to light in the band of intrinsic absorption. It is shown that the effect is related to changes in the ambient medium, probably, to the photoinduced charging of oxygen molecules adsorbed on the μc-Si: H films.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 10, 2000, pp. 17–21.
Original Russian Text Copyright © 2000 by Kazanski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Kozlov, Mell, Forsh.
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Kazanskii, A.G., Kozlov, S.N., Mell, H. et al. The effect of illumination on the electric and photoelectric properties of μc-Si: H films weakly doped with boron. Tech. Phys. Lett. 26, 410–411 (2000). https://doi.org/10.1134/1.1262861
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DOI: https://doi.org/10.1134/1.1262861