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Oriented growth and definition of medium angle semiconductor bicrystals

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Zeitschrift für Physik

Abstract

The physical and metallurgical procedure in the preparation of semiconductor bicrystals is described, methods of seed orientation are given and precision limits are discussed.

It is shown that medium angle boundaries can be grown at a high precision if proper techniques are used.

A number microphotographs of grown grain boundary structures is given.

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Author notes

  1. H. F. Mataré

    Present address: Research Laboratories, Sylvania Electric Products, Inc., Bayside, New York

Authors and Affiliations

  1. Research Laboratory, Tung-Sol Electric, Inc., Bloomfield, New Jersey

    H. F. Mataré & H. A. R. Wegener

Authors
  1. H. F. Mataré
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  2. H. A. R. Wegener
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Additional information

The authors are indebted to Dr. W.Shattes and E.Wisdo for skillful work and advice in bicrystal growth problems. For helpful cooperation in the structural interpretations, thanks is due to B.Levinger and J.Grosso, all of this laboratory. It is a pleasure to acknowledge the benefit of discussions with Dr. P.H.Keck (Sylvania Research Laboratories), Dr. H.Kedesdy (Signal Corps Laboratories), and Dr. W.T.Read (Bell Laboratories).

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Mataré, H.F., Wegener, H.A.R. Oriented growth and definition of medium angle semiconductor bicrystals. Z. Physik 148, 631–645 (1957). https://doi.org/10.1007/BF01328713

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  • DOI: https://doi.org/10.1007/BF01328713

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