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Characterisation of ultrathin dielectric films with ion beams

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Zeitschrift für Physik A Hadrons and Nuclei

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Abstract

In the evolution of silicon-based integrated circuits towards Giga-bit technologies, high-quality dielectric films of nanometer dimensions are needed. The successful fabrication of such ultrathin films on silicon substrates requires a good understanding of their physicochemical characteristics, their growth kinetics, and their growth mechanisms. In this research field, ion beam analytic techniques play an important role. This role as well as future developments are discussed.

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Author information

Authors and Affiliations

  1. Institut für Physik mit Ionenstrahlen, Ruhr-Universität Bochum, D-44780, Bochum, Germany

    C. Rolfs

  2. Institute de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS-Brasil

    I. J. R. Baumvol

Authors
  1. C. Rolfs
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  2. I. J. R. Baumvol
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Additional information

Communicated by B. Porh

Supported by the CAPES-DAAD program PROBRAL

The author would like to thank G. Amsel, F.C. Stedile, H.W. Becker, and W.H. Schulte for many fruitful discussions.

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Rolfs, C., Baumvol, I.J.R. Characterisation of ultrathin dielectric films with ion beams. Z. Physik A - Hadrons and Nuclei 353, 127–140 (1995). https://doi.org/10.1007/BF01295890

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  • DOI: https://doi.org/10.1007/BF01295890

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