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Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers

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Abstract

Picosecond time-resolved reflectivity measurements on bare silicon surfaces and silicon surfaces with oxide layers reveal very fast heat diffusion and material evaporation on subnanosecond time scales. With a thick oxide layer resolidification of a molten silicon surface can take place in a few hundred picoseconds. At high laser fluences, vaporization processes take only a couple of 100 ps.

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Author notes

  1. J. M. Liu

    Present address: GTE Laboratories Incorporated, 40 Sylvan Road, 02254, Waltham, MA, USA

  2. L. A. Lompre

    Present address: C.E.N./Saclay, DPh.G/S.P.A.S., F-91191, Gif-sur-Yvette Cedex, France

Authors and Affiliations

  1. Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, 02138, Cambridge, MA, USA

    J. M. Liu, L. A. Lompre, H. Kurz & N. Bloembergen

Authors
  1. J. M. Liu
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  2. L. A. Lompre
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  3. H. Kurz
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  4. N. Bloembergen
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Liu, J.M., Lompre, L.A., Kurz, H. et al. Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers. Appl. Phys. A 34, 25–29 (1984). https://doi.org/10.1007/BF00617570

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  • DOI: https://doi.org/10.1007/BF00617570

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