Abstract
We have measured systematically the Cr-related zero-phonon lines in the 0.839 eV region in a series of plastically-bent semi-insulating GaAs:Cr with compressive or tensile stress along various bending axes. As a result, it has been found that the residual stress in semi-insulating GaAs:Cr wafers can be sensitively characterized from a splitting and energy shift of the 0.839 eV Cr-related luminescence lines in the low-temperature photoluminescence spectra. Furthermore, we have applied this method to the characterization of the interface stress of OMVPE-grown ZnSe/GaAs:Cr heterostructure and found that anomalous stress exists at the ZnSe/GaAs interface, which is inconsistent with stress predicted by the lattice mismatch of the heterojunctions.
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Fujiwara, Y., Nishino, T. & Hamakawa, Y. Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines. Appl. Phys. A 41, 115–122 (1986). https://doi.org/10.1007/BF00631118
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DOI: https://doi.org/10.1007/BF00631118