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Lattice imaging study of in-depth disordering of Si-implanted GaAs

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Abstract

Cross-sectional high resolution transmission electron microscopy has been used to obtain direct information on the in-depth radiation damage distribution of weakly damaged GaAs by Si-ion implantation. A comparison is made between the experimental data and the calculated (using TRIM computer simulations) deposited energy by nuclear stopping for the same conditions. In particular a diffusion zone, with 200–300 Å width, of high point defect concentration beyond the damage peak is detected. These point defects are interpreted as As interstitials. By direct observation, information concerning the damage- and radiation-enhanced diffusion in implanted III–V compound semiconductors is obtained.

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References

  1. V. Graf, W. Heuberger: Nucl. Instr. Meth. B19/20, 388 (1987)

    Google Scholar 

  2. T. Sands, D.K. Sadana, R. Gronsky, J. Washburn: Appl. Phys. Lett.44, 874 (1984)

    Google Scholar 

  3. D.K. Sadana: Nucl. Instr. Meth. B7/8, 375 (1985)

    Google Scholar 

  4. R.A. McFarlane, L.D. Hess: Appl. Phys. Lett.36, 137 (1980)

    Google Scholar 

  5. M.G. Grimaldi, B.M. Paine, M.A. Nicolet, D.K. Sadana: J. Appl. Phys.52, 4038 (1981)

    Google Scholar 

  6. V.S. Speriosu, B.M. Paine, M.-A. Nicolet, H.L. Glass: Appl. Phys. Lett.40, 604 (1982)

    Google Scholar 

  7. S. Matteson: Nucl. Instr. Meth. B10/11, 510 (1985)

    Google Scholar 

  8. M. Arai, K. Nishiyama, N. Watanabe: Jpn. Appl. Phys.20, L124 (1981)

    Google Scholar 

  9. Y. Hirayama, Y. Suzuki, Okamoto: Jpn. J. Appl. Phys.24, 1498 (1985)

    Google Scholar 

  10. F. Hyuga, K. Watanabe, J. Osaka, K. Hoshikawa: Appl. Phys. Lett.48, 1742 (1986)

    Google Scholar 

  11. H. Kanber, M. Feng, J.M. Whelan: Proc. SPIE Int. Soc. Opt. Eng. (USA)463, 67 (1984)

    Google Scholar 

  12. R. Hillebrand, K. Scheerschmidt, W. Neumann: In Electron Microscopy 1984, Proceedings of the Eight European Congress on Electron Microscopy, ed. by A. Csanády, P. Röhlich, Szabó (Budapest 1984) p. 271

  13. F. Nagata, H. Kakibayashi: J. Electron Microsc.34, 311 (1985)

    Google Scholar 

  14. T.T. Sheng, R.B. Markus:J. Electrochem. Soc.127, 737 (1980)

    Google Scholar 

  15. J.C. Bravman, R. Sinclair: J. Electron. Microsc. Techn.1, 53 (1984)

    Google Scholar 

  16. A. Garulli, A. Armigliato, M. Vanzi: J. Microsc. Spectrosc. Electron.10, 135 (1985)

    Google Scholar 

  17. H. Kakibayashi, F. Nagata: Jpn. J. Appl. Phys.24, L905 (1985)

    Google Scholar 

  18. D.J. Barber: Proc. Fifth Europ. Congr. Electron Microsc. (Manchester 1972) p. 293

  19. N.G. Chew, A.G. Cullis: Inst. Phys. Conf. Ser. No. 78 (1985) (Hilger 1986) p. 143

  20. J.M. Gibson: Inst. Phys. Conf. Ser. No. 52 (1979). Inst. Phys. (Bristol, London 1980) p. 149

  21. J.P. Biersack, L.G. Haggmark: Nucl. Instr. Meth.174, 257 (1980)

    Google Scholar 

  22. T. Ishiguro, T. Suzuki, N. Suzuki, M. Ozawa: Proc. XIth Congr. Electron Microscopy 1 (Kyoto 1986) p. 353

    Google Scholar 

  23. G.R. Anstis, M.I. Goringe, J.L. Hutchison, B.J. Muggridge: Inst. Phys. Conf. Ser. No. 68 (1983). Inst. Phys. (Bristol, London 1984) p. 169

  24. E. Wilk, W. Wesch, K. Hehl: Phys. Stat. Solidi (a)76, K 197 (1983)

    Google Scholar 

  25. E. Wendler, W. Wesch, G. Götz: Phys. Stat. Solidi (a)93, 207 (1986)

    Google Scholar 

  26. G. Vitali, M. Kalitzova, N. Pashov, P. Werner, H. Bartsch: Appl. Phys. A45, 133 (1988)

    Google Scholar 

  27. R.C. Newman, J. Woodhead: J. Phys. C17, 1405 (1984)

    Google Scholar 

  28. M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov: Philos. Mag. A51, 373 (1985)

    Google Scholar 

  29. H. Okamoto, M. Seki, Y. Horikoshi: Jpn. J. Appl. Phys.22, L 367 (1983)

    Google Scholar 

  30. P.M. Petroff, A.C. Gossard, W. Wiegmann, A. Savage: J. Cryst. Growth44, 5 (1978)

    Google Scholar 

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Authors and Affiliations

  1. Energetics Department and GNSM of C.N.R., University of Rome “La Sapienza”, Via Scarpa 14, I-00161, Rome, Italy

    G. Vitali

  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, Bld. Lenin 72, BG-1784, Sofia, Bulgaria

    M. Kalitzova & N. Pashov

  3. Institute of Solid State Physics and Electron Microscopy, Academy of Sciences of GDR, DDR-4020, Weinberg, Halle (S), German Democratic Republic

    P. Werner & H. Bartsch

  4. Institute of Electronics, Bulgarian Academy of Sciences, Bld. Lenin 72, BG-1784, Sofia, Bulgaria

    D. Karpuzov

Authors
  1. G. Vitali
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  2. M. Kalitzova
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  3. N. Pashov
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  4. P. Werner
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  5. H. Bartsch
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  6. D. Karpuzov
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Vitali, G., Kalitzova, M., Pashov, N. et al. Lattice imaging study of in-depth disordering of Si-implanted GaAs. Appl. Phys. A 46, 185–190 (1988). https://doi.org/10.1007/BF00939262

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  • DOI: https://doi.org/10.1007/BF00939262

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