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Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor deposition

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Abstract

Conductivity of photo-CVD microcrystalline silicon (μc-Si:H) in wide range of dopant gas concentration (10−5<PH3/SiH4, B2H6/SiH4<10−2) is investigated. As compared with a-Si:H, the conductivity of the film is improved more than two orders of magnitude by microcrystallization for a wide range of dopant concentration at a deposition temperature of as low as 150°C. This indicates the suitability of photo-CVD for low temperature processing. A conductivity minimum is found at a doping ratio of about B2H6/SiH4=1×10−5.

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Author notes

  1. K. Suzuki

    Present address: Electronic Materials Laboratory, Sumitomo Metal Mining Co., Ltd., 1-6-1 Suehiro-cho, Ohme, 198, Tokyo, Japan

Authors and Affiliations

  1. Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, 184, Tokyo, Japan

    K. Suzuki, K. Kuroiwa, K. Kamisako & Y. Tarui

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  1. K. Suzuki
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  2. K. Kuroiwa
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  3. K. Kamisako
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  4. Y. Tarui
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Suzuki, K., Kuroiwa, K., Kamisako, K. et al. Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor deposition. Appl. Phys. A 50, 227–231 (1990). https://doi.org/10.1007/BF00343422

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  • DOI: https://doi.org/10.1007/BF00343422

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