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X-ray irradiation enhanced critical current density and strong pinning sites created in Gd1Ba2Cu3O7−x thin films

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Abstract

An enhancement of the critical current density (to more than 106 A/cm2 below 65 K) of Gd1Ba2Cu3O7−x superconducting thin films was achieved by X-ray irradiation with oxygen annealing. This process of X-ray irradiation with oxygen annealing introduced stable pinning centers into the crystal and also increased the activation energy from 0.1 eV to 0.25 eV.

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Authors and Affiliations

  1. Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, 570, Osaka, Japan

    S. Kohiki, S. Hatta, T. Kamada, A. Enokihara, T. Satoh, K. Setsune & K. Wasa

  2. Faculty of Engineering, University of Tokyo, Hongo 7-3-1, Bunkyoku, 113, Tokyo, Japan

    Y. Higashi, S. Fukushima & Y. Gohshi

Authors
  1. S. Kohiki
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  2. S. Hatta
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  3. T. Kamada
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  4. A. Enokihara
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  5. T. Satoh
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  6. K. Setsune
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  7. K. Wasa
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  8. Y. Higashi
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  9. S. Fukushima
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  10. Y. Gohshi
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Kohiki, S., Hatta, S., Kamada, T. et al. X-ray irradiation enhanced critical current density and strong pinning sites created in Gd1Ba2Cu3O7−x thin films. Appl. Phys. A 50, 509–514 (1990). https://doi.org/10.1007/BF00324576

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  • DOI: https://doi.org/10.1007/BF00324576

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