Abstract
Primary steps of melting (disordering) of GaAs surface layers after femtosecond pulse excitation have been measured through second-harmonic generation in reflection. A numerical fit of the experimental data yield a characteristic time delay between excitation and lattice melting of about 75 fs.
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See for example: Energy Beam-Solid Interactions and Transient Thermal Processing, ed. by D.K. Biegelsen, G.A. Rosgonyi, C.V. Shank (Materials Research Society, Pittsburgh 1985) Vol. 35
C.V. Shank, R. Yen, C. Hirliman: Phys. Rev. Lett. 50, 454 (1983)
J.A. Kash, J.C. Tsang, J.M. Hvam: Phys. Rev. Lett. 54, 2151 (1985)
C.V. Shank, R. Yen, C. Hirliman: Phys. Rev. Lett. 51, 900 (1983)
H.W.K. Tom, G.D. Aumiller, C.H. Brito Cruz: Phys. Rev. Lett. 60, 1438 (1988)
N. Bloembergen, A.M. Malvezzi, J.M. Liu: Appl. Phys. Lett. 45, 1019 (1984)
W. Dietel, E. Döpel, V. Petrov, C. Rempel, W. Rudolph, B. Wilhelmi, G. Marowsky, F.P. Schäfer: Appl. Phys. B 46, 183 (1988)
P. Hermes, B. Danielsik, N. Fabricius, D. von der Linde, J. Kuhl, J. Heppner, B. Stritzker, A. Pospieszczyk: Appl. Phys. A 39, 9 (1986)
See for example A. Laubereau: In Semiconductors Probed by Ultrafast Laser Spectroscopy, ed. by R.R. Alfano (Academic, New York 1984)
A. Compaan: J. Lumin. 30, 425 (1985)
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Schröder, T., Rudolph, W., Govorkov, S.V. et al. Femtosecond laser-induced melting of GaAs probed by optical second-harmonic generation. Appl. Phys. A 51, 49–51 (1990). https://doi.org/10.1007/BF00324464
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DOI: https://doi.org/10.1007/BF00324464