Abstract
The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE.
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