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New growth technique for luminescent layers on silicon

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Abstract

We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstr.1, W-7000, Stuttgart 80, Fed. Rep. Germany

    M. S. Brandt, A. Breitschwerdt, H. D. Fuchs, A. Höpner, M. Rosenbauer, M. Stutzmann & J. Weber

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  1. M. S. Brandt
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  2. A. Breitschwerdt
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  3. H. D. Fuchs
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  4. A. Höpner
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  5. M. Rosenbauer
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  6. M. Stutzmann
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  7. J. Weber
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Brandt, M.S., Breitschwerdt, A., Fuchs, H.D. et al. New growth technique for luminescent layers on silicon. Appl. Phys. A 54, 567–569 (1992). https://doi.org/10.1007/BF00324341

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  • DOI: https://doi.org/10.1007/BF00324341

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