Abstract
The experimental gate- (V GS) and drain-voltage (V DS) dependence of the fractional Random Telegraph Signal (RTS) amplitude ΔI D/I D, obtained on a large series of submicron Metal-Oxide Semiconductor Transistors (MOSTs), is reported. The observed variation of the RTS amplitude in linear operation is discussed in view of recently published models. As will be shown, the large spread in weak-inversion amplitudes can only be explained by taking into account the microscopic nature of the oxide trap and its environment. The position of a trap along the channel can in principle be retrieved from studying the so-called RTS amplitude asymmetry, defined as the V DS dependence of the amplitude in both normal and reverse operation of the transistor. Widely different asymmetry behaviour is observed in this work. Here, a qualitative model will be derived which gives a more refined analysis and offers some deeper insight than existing theories. However, to fully understand the RTS amplitude in weak inversion, more microscopic detail is needed.
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References
R.H. Dennard: In The Physics and Fabrication of Microstructures and Devices, ed. by M.J. Kelly, C. Weisbuch (Springer, Berlin, Heidelberg 1986) pp. 352–365
G. Ghibaudo, O. Roux, J. Brini: In Proc. of the 11th Int'l Conf. on Noise in Physical Systems, ed. by T. Musha, S. Sato, M. Yamamoto (Ohmsha, Tokyo 1991) pp. 229–232
M.J. Kirton, M.J. Uren: Adv. Phys. 38, 367 (1989)
M.J. Uren, D.J. Day, M.J. Kirton: Appl. Phys. Lett. 47, 1195 (1985)
P. Restle: Appl. Phys. Lett. 53, 1862 (1988)
E. Simoen, B. Dierickx, C. Claeys: Microel. Engin. 19, 605 (1992)
E. Simoen, C. Claeys: Appl. Phys. A 57, 283 (1993)
E. Simoen, B. Dierickx: In Proc. 12th Int'l Conf. on Noise and 1 / f Fluctuations in Physical Systems, ed. by A.L. Chung, P.H. Handel (AIP, New York) p. 390
H. Nakamura, N. Yasuda, K. Taniguchi, C. Hamaguchi, A. Toriumi: Jpn. J. Appl. Phys. 28, L2057 (1989)
M.J. Kirton, M.J. Uren, S. Collins, M. Schulz, A. Karmann, K. Scheffer: Semicon. Sci. Technol. 4, 1116 (1989)
A. Ohata, A. Toriumi, M. Iwasa, K. Natori: J. Appl. Phys. 68, 200 (1990)
K.K. Hung, P.K. Ko, C. Hu, Y. C. Cheng: IEEE ED Lett. 11, 90 (1990)
P. Fang, K.K. Hung, P.K. Ko, C. Hu: IEEE ED Lett. 12, 273 (1991)
E. Simoen, B. Dierickx, C. Claeys, G. Declerck: IEEE Trans. ED-39, 422 (1992)
O. Roux, B. Dierickx, E. Simoen, C. Claeys, G. Ghibaudo, J. Brini: Microel. Engin. 15, 547 (1991)
O. Roux dit Buisson, G. Ghibaudo, J. Brini: Solid-State Electron. 35, 1273 (1992)
G. Ghibaudo: Solid-State Electron. 32, 563 (1989)
G. Ghibaudo: IEEE ED Lett. 11, 352 (1990)
G. Reimbold: IEEE Trans. ED Lett. 31, 1190 (1984)
Y.P. Tsividis: Operation and Modeling of the MOS Transistor (McGraw Hill, New York 1981) Chap. 4
S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (McGraw-Hill, New York 1981) Chap. 8
Z.M. Shi, J.-P. Miéville, M. Dutoit: Appl. Phys. Lett. 62, 2233 (1993)
K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth, D.M. Tennant: Phys. Rev. Lett. 52, 228 (1984)
M. Schulz, A. Karmann: Phys. Scr. T 35, 273 (1991)
M. Schulz, A. Karmann: Appl. Phys. A 52, 104 (1991)
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Simoen, E., Dierickx, B., De Canne, B. et al. On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs. Appl. Phys. A 58, 353–358 (1994). https://doi.org/10.1007/BF00323609
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DOI: https://doi.org/10.1007/BF00323609