Abstract
A cryostat has been designed for the refrigeration of a semiconductor diode laser (presently GaAs), using a flow of helium gas with controlled temperature. The possibility of independent adjustment of the injection current and of the temperature of the GaAs laser support allows cw emission over a wide wavelength range (∼100 Å for a given diode) while maintaining single-mode operation. A long-term frequency stability of ±30 MHz of the free-running single-mode laser has been obtained. By varying the dc injection current, it was possible to achieve linear scanning of the mode frequency, step by step or continuously, over at least 20 GHz without hopping. Possible applications in optical pumping and high-resolution spectroscopy are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
I. Hayashi, M.B. Panish, P.W. Foy, S. Sumski: Appl. Phys. Letters17, 109 (1970)
I. Hayashi, M.B. Panish, F.K. Reinhart: J. Appl. Phys.42, 1929 (1971)
W.E. Ahearn, J.W. Crowe: IEEE J. Quant. Electron. QE-2, 597 (1966)
E.D. Hinkley, C. Freed: Phys. Rev. Letters23, 277 (1969)
K.L. Konnerth, J.C. Marinace: IEEE J. Quant. Electron. QE-4, 173 (1968)
H.K. Kessler: Rev. Sc. Instr.37, 517 (1966)
J.C. Marinace: IBM J. Res. Develop.8, 543 (1964)
C.H. Gooch:Gallium Arsenide Lasers (Wiley-Interscience, New York 1969)
R. Ludeke, E.P. Harris: Appl. Phys. Letters20, 499 (1972)
G. Burns, M.I. Nathan: Proc. IEEE52, 770 (1964)
J.M. Lavine, A.A. Iannini: J. Appl. Phys.36, 402 (1965)
J.A. Armstrong, A.W. Smith: Phys. Rev.140A, 155 (1965)
J. Feinleb, S. Groves, W. Paul, R. Zallen: Phys. Rev.131, 2070 (1963)
A.S. Pine, C.J. Glassbrenner, J.A. Kafalas: IEEE J. Quant. Electron. QE-9, 800 (1973)
K.W. Nill, F.A. Blum, A.R. Calawa, T.C. Harman: Appl. Phys. Letters21, 132 (1972)
S. Siahatgar, U.E. Hochuli: IEEE J. Quant. Electron. QE-5, 295 (1969)
R.T. Ku, J.T. Verdeyen, B.E. Cherrington, L. Goldstein: J. Appl. Phys.43, 4579 (1972)
J.-L.Picqué: IEEE J. Quant. Electron. QE-10 (December 1974), to be published
P. Cerez, M. Arditi, A. Kastler: C. R. Acad. Sci. (Paris)267 B 282 (1968)
J.-L.Picqué, H.H.Stroke: Comments Atom. Molec. Phys., to be published
Yu.A. Bykovskii, V.L. Velichanskii, I.G. Goncharov, V.A. Maslov: ZhETF57, 1109 (1969) [Sov. Phys. JETP30, 605 (1970)]
K. Konnerth: Proc. IEEE53, 397 (1965)
Yu. A. Bykovskii, V.L. Velichanskii, V.K. Egorov, A.L. Irshinskii, A.V. Makovkin, V.A. Maslov: ZhETF Pis. Red.17, 302, (1973) [JETP Letters17, 216 (1973)]
M. Arditi, J.-L. Picqué: to be published
S. Svanberg, P. Tsekeris, W. Happer: Phys. Rev. Letters,30, 817 (1973)
H.T. Duong, S. Liberman, J. Pinard, J.-L. Vialle: Phys. Rev. Letters33, 339 (1974)
H.T. Duong, P. Jacquinot, S. Liberman J. Pinard, J.-L. Vialle: C. R. Acad. Sci. (Paris)276 B, 909 (1973)
B. Bederson: Comments Atom. Molec. Phys.4, No. 4, to be published
J.E. Geusic, W.B. Bridges, J.I. Pankove: Proc IEEE58, 1419 (1970)
Author information
Authors and Affiliations
Additional information
Work supported at N.Y.U. by the National Science Foundation, Grant GP 15258, and by the James Arthur Endowment Fund.
Rights and permissions
About this article
Cite this article
Picqué, J.L., Roizen, S., Stroke, H.H. et al. CW, single-mode, tunable GaAs laser system with good frequency stability. Appl. Phys. 6, 373–379 (1975). https://doi.org/10.1007/BF00883658
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00883658