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Raman-scattering spectrum of GaN straight nanowires

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Abstract.

The Raman spectrum of GaN straight nanowires deposited on a LaAlO3 crystal substrate was studied. The E2 (high) phonon frequency at 560 cm-1 shows a 9 cm-1 shift compared with the calculated value. The low-energy shift and band broadening of the Raman modes result from the nanosize effect. The unique property of the low intensity ratio of IE2/IA1(LO) on the Raman spectrum from the GaN straight nanowires was observed.

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Authors and Affiliations

  1. Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, P.R. China, , , , , , CN

    J.Y. Li, X.L. Chen, Y.G. Cao & Y.C. Lan

  2. Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, P.R. China, , , , , , CN

    Z.Y. Qiao

Authors
  1. J.Y. Li
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  2. X.L. Chen
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  3. Y.G. Cao
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  4. Z.Y. Qiao
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  5. Y.C. Lan
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Additional information

Received: 5 June 2000 / Accepted: 7 June 2000 / Published online: 2 August 2000

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Li, J., Chen, X., Cao, Y. et al. Raman-scattering spectrum of GaN straight nanowires . Appl Phys A 71, 345–346 (2000). https://doi.org/10.1007/s003390000602

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  • DOI: https://doi.org/10.1007/s003390000602

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