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Atomic Force Microscopy Studies of SnO2 Thin Film Microstruc tures Deposited by Atomic Layer Epitaxy

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Abstract.

 ALE-grown, rutile-type SnO2 thin films and gas sensor structures based thereupon were studied by AFM with main emphasis on cross-sectional investigations (X-AFM). On glass substrates the polycrystalline films showed a preferred orientation which depended on the film thickness and growth temperature while on single crystal sapphire () the growth was heteroepitaxial. For the X-AFM studies various sample preparation techniques were investigated but only ion beam etching gave satisfactory results and revealed substructures in the sensor structure consisting of Pt and SnO2 layers on a silicon substrate.

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Authors and Affiliations

  1.  Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Finland, , , , , , FI

    Mikko Utriainen, Hanna Lattu, Heli Viirola & Lauri Niinistö

  2.  Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Wien, Austria, , , , , , AT

    Roland Resch & Gernot Friedbacher

Authors
  1. Mikko Utriainen
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  2. Hanna Lattu
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  3. Heli Viirola
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  4. Lauri Niinistö
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  5. Roland Resch
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  6. Gernot Friedbacher
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Utriainen, M., Lattu, H., Viirola, H. et al. Atomic Force Microscopy Studies of SnO2 Thin Film Microstruc tures Deposited by Atomic Layer Epitaxy. Mikrochim Acta 133, 119–123 (2000). https://doi.org/10.1007/s006040070080

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  • DOI: https://doi.org/10.1007/s006040070080

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