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Calibration ofI(E) intov d(E) characteristics on h-shaped gunn devices for al x Ga1−x As alloys under hydrostatic pressure

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Czechoslovak Journal of Physics Aims and scope

Abstract

The current-field characteristics for Al x Ga1−x As alloys under hydrostatic pressure have been calibrated into velocity-field characteristics using low field experimental data. The saturated drift velocity forx = 0.29 decreases from 7.8 × 106 cm/s atP = 3.5 Kbar to 3.8 × 106 cm/s atP = 8 Kbar. It is shown that the saturated velocity decreases from the value of 1.0 × 107 cm/s in GaAs to about 3.8 × 106 cm/s forx ≈ 0.39. The results should be useful in the design of high field devices of Al x Ga1−x As.

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References

  1. A. Majerfeld and G.L. Pearson: IEEE Trans. Electron Devices14 (1967) 632.

    Google Scholar 

  2. A. A. Immorlica and G.L. Pearson: Appl. Phys. Lett.25 (1974) 570.

    Article  Google Scholar 

  3. M. Kawashima, K. Ohta, and S. Katoda: inProc. VI Int. Symp. GaAs and Related Compounds (Ed. C. Hilsum),33a, 1977, p. 296.

    Google Scholar 

  4. J.E. Sitch, A. Majerfeld, P.N. Robson, and F. Hasegawa: Electron Lett.11 (1975) 457.

    Article  ADS  Google Scholar 

  5. T. Sugeta, A. Majerfeld, A.K. Saxena, P.N. Robson, and G. Hill: inProc. Cornell Conf. ‘Active Microwave Semiconductor Devices and Circuits’, Ithaca 1977 (Ed. L.F. Eastman), p. 45.

  6. T. Sugeta, A. Majerfeld, A.K. Saxena, and P.N. Robson: Appl. Phys. Lett.31 (1977) 842.

    Article  ADS  Google Scholar 

  7. A.K. Saxena: Solid State Commun.39 (1981) 839.

    Article  Google Scholar 

  8. A.K. Saxena: Phys. Rev. B24 (1981) 3295.

    Article  ADS  Google Scholar 

  9. A.K. Saxena: Phys. Status Solidi B105 (1981) 777.

    Article  Google Scholar 

  10. A.K. Saxena and K.S. Gummurthy: J. Phys. Chem. Solids43 (1987) 801.

    Article  Google Scholar 

  11. A.K. Saxena: J. Phys. C13 (1980) 4323.

    Article  ADS  Google Scholar 

  12. A.K. Saxena: Phys. Rev. B25 (1982) 5428.

    Article  ADS  Google Scholar 

  13. M.A. Littlejohn, J.R. Hauser, and T.H. Glisson: J. Appl. Phys.48 (1977) 4587.

    Article  ADS  Google Scholar 

  14. P.K. Bhattacharya, U. Das, and M.J. Ludowise: Phys. Rev. B19 (1984) 6623.

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Electronics and Computer Engineering, University of Roorkee, 247 667, Roorkee (U.P.), India

    Ashok K. Saxena & V. M. Sharma

  2. Department of Physics, University of Roorkee, 247 667, Roorkee (U.P.), India

    Prabhat Singh

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  1. Ashok K. Saxena
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  2. V. M. Sharma
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  3. Prabhat Singh
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Saxena, A.K., Sharma, V.M. & Singh, P. Calibration ofI(E) intov d(E) characteristics on h-shaped gunn devices for al x Ga1−x As alloys under hydrostatic pressure. Czech J Phys 48, 97–101 (1998). https://doi.org/10.1023/A:1021296431566

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  • DOI: https://doi.org/10.1023/A:1021296431566

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