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Application of semiconductor detectors with p-n junctions in nuclear instrument making

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Measurement Techniques Aims and scope

Conclusions

It is possible to state from the factory and State test results that the equipment developed by us is, with respect to several of its parameters, as good as similar foreign makes. A further study and development of semiconductor detectors will make it possible in future to produce physicoelectronic equipment whose parameters will have new qualities suitable for solving a number of technical problems, such as analyzing substances by their α-, β-, and γ-radiation spectra, improving the operating characteristics of equipment for x-ray-chemical analysis, activation analysis, etc.

The authors wish to express their gratitude to L. S. Gorn and E. B. Usha for their valuable suggestions and advice, to O. B. Podgornyi and O. B. Saratovskii for their assistance in adjusting the equipment and carrying out experiments, as well as to V. I. Lopovok and other designers who participated in the development of this instrument.

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Literature cited

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Translated from Izmeritel'naya Tekhnika, No. 10, pp. 61–63, October, 1967.

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Matveev, V.V., Sel'dyakov, Y.P. & Sokolov, A.D. Application of semiconductor detectors with p-n junctions in nuclear instrument making. Meas Tech 10, 1244–1247 (1967). https://doi.org/10.1007/BF00981508

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  • DOI: https://doi.org/10.1007/BF00981508

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