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Investigation of intrinsic defect-related deep centers in ZnSe

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

We have studied deep centers in highly resistive (ρτ ∼ 1012 Ω·cm) ZnSe, containing intrinsic impurities and defects, by means of nonequilibrium photoconductivity, photoluminescence, and wavelength-modulated transmission spectroscopy. We have determined the energy positions of photosensitive deep acceptors with ionization energies of 0.10, 0.18, 0.23, 0.27, 0.34, and 0.47 eV, as well as of radiative and nonradiative recombination centers.

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Authors and Affiliations

  1. V. I. Lenin State University, Kishinev

    V. A. Korotkov, L. V. Malikova, V. I. Morozova & A. V. Simashkevich

Authors
  1. V. A. Korotkov
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  2. L. V. Malikova
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  3. V. I. Morozova
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  4. A. V. Simashkevich
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Additional information

ted from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 42–46, March, 1989.

The authors consider it a pleasant duty to thank M. K. Sheinkman for his interest in This work and S. S. Ostapenko for his help in PL measurements and helpful discussions.

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Korotkov, V.A., Malikova, L.V., Morozova, V.I. et al. Investigation of intrinsic defect-related deep centers in ZnSe. Soviet Physics Journal 32, 190–194 (1989). https://doi.org/10.1007/BF00897382

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  • DOI: https://doi.org/10.1007/BF00897382

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