Abstract
The electric field gradient (EFG) for117InBe has been determined by a TDPAC measurement to be eqtot=1.83(1) 1017V/cm2 at room temperature. The sources were prepared by ion — implantation of117Cd in a Be single crystal. The EFG was found to decrease considerably with increasing temperature. The results are compared to those of other impurities in Be.
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On leave from Tata Inst. of Fundamental Research, Bombay 400 005.
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Devare, S.H., Kotthaus, J. & Vianden, R. The electric field gradient and its temperature dependence for indium in beryllium. Hyperfine Interact 15, 241–244 (1983). https://doi.org/10.1007/BF02159747
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DOI: https://doi.org/10.1007/BF02159747