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Point defect trapping at111In in copper after ion implantation

  • Radiation Damage, Defects
  • Implantation, Impurities
  • Published:
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References

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Supported in part by the Bundesminister fur Forschung und Technologie and by the Gesellschaft fur Kernforschung mbH., Karlsruhe

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Echt, O., Recknagel, E., Weidinger, A. et al. Point defect trapping at111In in copper after ion implantation. Hyperfine Interact 4, 706–709 (1978). https://doi.org/10.1007/BF01021917

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  • DOI: https://doi.org/10.1007/BF01021917

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