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Implantation site of boron in heavily doped silicon: A β-NMR study

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Abstract

Using β-NMR with12B as nuclear probes the temperature dependence of the lattice-site occupation of boron implanted into heavily doped silicon is studied. In p-type material the unperturbed substitutional fraction of12B increases from 10% at 300 K to ≃40 % at 950 K. In n-type material this fraction starting from 20% at 300 K approaches the saturation value of ≃80 % at 600 K already. This behaviour suggests that the site of implanted boron in silicon is controlled by the Fermi level.

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References

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Author notes

  1. H. Metzner

    Present address: Bereich Kern- und Strahlenphysik and FU, Fachbereich Physik, HMI, D-1000, Berlin 39

Authors and Affiliations

  1. Fachbereich Physik der Philipps-Universität Marburg, Renthof 5, D-3550, Marburg, FRG

    H. Metzner, G. Sulzer, W. Seelinger, B. Ittermann, H. -P. Erank, B. Fischer, K. -H. Ergezinger, R. Dippel, E. Diehl, H. -J. Stöckmann & H. Ackermann

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  1. H. Metzner
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  2. G. Sulzer
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  3. W. Seelinger
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  4. B. Ittermann
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  5. H. -P. Erank
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  6. B. Fischer
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  7. K. -H. Ergezinger
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  8. R. Dippel
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  9. E. Diehl
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  10. H. -J. Stöckmann
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  11. H. Ackermann
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Metzner, H., Sulzer, G., Seelinger, W. et al. Implantation site of boron in heavily doped silicon: A β-NMR study. Hyperfine Interact 60, 769–772 (1990). https://doi.org/10.1007/BF02399866

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  • DOI: https://doi.org/10.1007/BF02399866

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