Abstract
The interactions of co-evaporated Ti0.3W0.7 films with GaAs have been studied after annealing at temperatures in the range of 650 to 900° C for 15 min employing Rutherford backscattering, transmission and scanning electron microscopy. X-ray diffraction and energy-dispersive X-ray analysis techniques. Reaction has been found to take place at 650° C as evidenced by the presence of an AsTi compound in the region near the interface of TiW film and GaAs. Gallium diffuses out to the surface at temperatures above 750° C and causes surface morphological degradation, which can be related to the instability of the TiW Schottky barrier height at higher temperatures ≳750° C as reported in the literature.
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Rai, A.K., Bhattacharya, R.S. & Rashid, M.H. Interaction of TiW film with GaAs. J Mater Sci 21, 1675–1680 (1986). https://doi.org/10.1007/BF01114724
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DOI: https://doi.org/10.1007/BF01114724