Abstract
Aluminium nitride films were grown on silicon substrates using the chemical vapour deposition (CVD) method. The properties of the films were studied by scanning electron microscopy (SEM), atomic force microscope (AFM) measurements, X-ray diffraction and Raman scattering. The resulting films were strongly textured and had a preferential orientation with the c-axis normal to the surface, the Raman spectra showed two peaks at 607 and 653 cm−1 and two large bands at 750 and 900 cm−1 of smaller intensity. Both the macro- and micro-Raman spectra showed the same peaks.
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Khan, A.H., Odeh, M.F., Meese, J.M. et al. Growth of oriented aluminium nitride films on silicon by chemical vapour deposition. JOURNAL OF MATERIALS SCIENCE 29, 4314–4318 (1994). https://doi.org/10.1007/BF00414216
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DOI: https://doi.org/10.1007/BF00414216