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Preparation of highly oriented thin film exhibiting transparent conduction by the sol-gel process

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Abstract

Highly oriented thin films exhibiting transparent conduction aluminium-doped ZnO (AZO), were prepared by a spin-coating method. The effects of the solvents on the preparation and electrical properties of the thin films were examined. The thin films were formed on quartz glass substrates by spin-coating into a selected solution and calcining at 700 °C for 5 h. The thin films had a resistivity of ρ (Ω cm)=1.5 after heat treatment in an air atmosphere, and 1.5 × 10−3 Ω cm in a reducing atmosphere, and a transmission of about 85% in the visible light region. The differences in the high orientation and the conductivities were attributed to a chelate formation in the aluminium-doped ZnO due to the solvent effect.

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Authors and Affiliations

  1. Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, 278, Chiba, Japan

    K. Nishio, S. Miyake, T. Sei, Y. Watanabe & T. Tsuchiya

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  1. K. Nishio
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  2. S. Miyake
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  3. T. Sei
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  4. Y. Watanabe
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  5. T. Tsuchiya
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Nishio, K., Miyake, S., Sei, T. et al. Preparation of highly oriented thin film exhibiting transparent conduction by the sol-gel process. JOURNAL OF MATERIALS SCIENCE 31, 3651–3656 (1996). https://doi.org/10.1007/BF00352774

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  • DOI: https://doi.org/10.1007/BF00352774

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