Abstract
Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
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Lendvay, E., Kuhn, A., Chevy, A. et al. Dislocation etching of GaSe single crystals. J Mater Sci 6, 305–308 (1971). https://doi.org/10.1007/BF02403096
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DOI: https://doi.org/10.1007/BF02403096