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The infrared absorption of antimony-doped SiO2 films chemically vapour deposited in the TEOS-SbCl5-O2 system at low temperature

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Journal of Materials Science Letters

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References

  1. S. H. SONG, T. NIIMI, K. KOBAYASHI and K. KUDO,J. Electrochem. Soc. 129 (1982) 841.

    Google Scholar 

  2. J. WONG,J. Elec. Mater. 5 (1976) 113.

    Google Scholar 

  3. W. KERN,RCA Rev. 37 (1976) 55.

    Google Scholar 

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Authors and Affiliations

  1. IFTAR, POB MG, 76900, Magurele-Bucharest, Romania

    N. Vlahovici

  2. R&D Center for Electronic Components, Str. Erou Iancu Nicolae Nr 32B, R-72996, Bucharest, Romania

    C. Pavelescu & I. Kleps

Authors
  1. N. Vlahovici
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  2. C. Pavelescu
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  3. I. Kleps
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Vlahovici, N., Pavelescu, C. & Kleps, I. The infrared absorption of antimony-doped SiO2 films chemically vapour deposited in the TEOS-SbCl5-O2 system at low temperature. J Mater Sci Lett 10, 920–921 (1991). https://doi.org/10.1007/BF00724782

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  • DOI: https://doi.org/10.1007/BF00724782

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