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Evolution of the mechanical stress on PECVD silicon oxide films under thermal processing

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Phys. Fac., Havana University, San Lázaro y L, 10400, Vedado, Havana, Cuba

    J. A. Rodríguez

  2. National Center for Microelectronic, Bellaterra, 08193, Barcelona, Spain

    A. Llobera

  3. National Center for Microelectronic, Bellaterra, 08193, Barcelona, Spain

    C. Domínguez

Authors
  1. J. A. Rodríguez
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  2. A. Llobera
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  3. C. Domínguez
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Rodríguez, J.A., Llobera, A. & Domínguez, C. Evolution of the mechanical stress on PECVD silicon oxide films under thermal processing. Journal of Materials Science Letters 19, 1399–1401 (2000). https://doi.org/10.1023/A:1006725818086

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