Skip to main content
Log in

Etching kinetics of the low temperature chemically vapour deposited SiO2 films

  • Published:
Journal of Materials Science Letters

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. W. A. PLISKIN,J. Vac. Sci. Technol. 14 (1977) 1064.

    Google Scholar 

  2. E. A. TAFT,J. Electrochem. Soc. 126 (1979) 1729.

    Google Scholar 

  3. C. PAVELESCU, C. COBIANU and A. VANCU, ibid.130 (1983) 975.

    Google Scholar 

  4. N. GOLDSMITH and W. KERN,RCA Rev. 28 (1967) 153.

    Google Scholar 

  5. W. KERN, ibid.37 (1976) 78.

    Google Scholar 

  6. C. COBIANU and C. PAVELESCU,Thin Solid Films 102 (1983) 361.

    Google Scholar 

  7. W. KERN,Solid State Technol. 18 (1975) 25.

    Google Scholar 

  8. C. COBIANU and C. PAVELESCU,Rev. Roum Chim. 28 (1983) 57.

    Google Scholar 

  9. W. KERN,RCA Rev. 29 (1968) 557.

    Google Scholar 

  10. C. COBIANU and C. PAVELESCU,J. Electrochem. Soc. 130 (1983) 1888.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pavelescu, C., Cobianu, C. & Segal, E. Etching kinetics of the low temperature chemically vapour deposited SiO2 films. J Mater Sci Lett 3, 643–646 (1984). https://doi.org/10.1007/BF00719636

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00719636

Keywords

Navigation