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Analysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties

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Journal of Materials Science Letters

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Pavelescu, C., Cobianu, C. Analysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties. J Mater Sci Lett 5, 1298–1300 (1986). https://doi.org/10.1007/BF01729399

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  • DOI: https://doi.org/10.1007/BF01729399

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