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Determination of trace element in a silicon single crystal

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Abstract

Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi — empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from element concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values.

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Authors and Affiliations

  1. Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, 590-04, Osaka, (Japan)

    T. Takeuchi, Y. Nakano & T. Fukuda

  2. Semiconductor Laboratory, Fujitsu Laboratories Ltd., Wakamiya, 243-01, Morinosato, Atsugi, (Japan)

    I. Hirai, A. Osawa & N. Toyokura

Authors
  1. T. Takeuchi
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  2. Y. Nakano
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  3. T. Fukuda
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  4. I. Hirai
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  5. A. Osawa
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  6. N. Toyokura
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Takeuchi, T., Nakano, Y., Fukuda, T. et al. Determination of trace element in a silicon single crystal. Journal of Radioanalytical and Nuclear Chemistry, Articles 168, 367–376 (1993). https://doi.org/10.1007/BF02040516

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  • DOI: https://doi.org/10.1007/BF02040516

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