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Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

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Il Nuovo Cimento D

Summary

The temperature dependence of the emission intensity due to conduction band-to-neutral acceptor recombination (e-A0) is investigated in a GaAs/Ga0.7Al0.3As single quantum well. It is shown that the thermal quenching of the (e-A0) emission peak is not monotonous with temperature. The increase of the (e-A0) emission intensity up to about 30 K is interpreted as a consequence of the ionization of shallow donors, while the decrease in emission intensity at higher temperature is due to ionization of neutral acceptors.

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Author notes

  1. A. Hameury

    Present address: Laboratoire de Physique des Solides, Université de Provence, 13331, Marseille, France

Authors and Affiliations

  1. Scuola Normale Superiore, Piazza dei Cavalieri 7, 56100, Pisa, Italia

    Y. Chen & A. Hameury

  2. Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Sophia Antipolis, 06560, Valbonne, France

    J. Massies & C. Neri

Authors
  1. Y. Chen
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  2. A. Hameury
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  3. J. Massies
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  4. C. Neri
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Chen, Y., Hameury, A., Massies, J. et al. Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well. Il Nuovo Cimento D 10, 1243–1248 (1988). https://doi.org/10.1007/BF02455867

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  • DOI: https://doi.org/10.1007/BF02455867

PACS 71.55

PACS 78.55

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