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Optical study on ultrathin InAs/InP single quantum wells

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Il Nuovo Cimento D

Summary

Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.

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Author notes

  1. C. Jordan

    Present address: Department of Physics, Trinity College, Dublin 2, Ireland

Authors and Affiliations

  1. Institut de Physique Appliquée, Ecole Polytechnique Fédérale, PH-Ecublens, CH-1015, Lausanne, Switzerland

    A. Bitz, C. Jordan, M. Di Ventra & J. L. Staehli

  2. Ecole Normale Superieure de Lyon, CECAM, Allée d'Italie 46, F-69364, Lyon Cedex 07, France

    K. A. Mäder

  3. Istituto di Fisica «A. Volta», Università degli Studi, Via Bassi 6, I-27100, Pavia, Italy

    L. C. Andreani

  4. Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale, PH-Ecublens, CH-1015, Lausanne, Switzerland

    J. F. Carlin & A. Rudra

Authors
  1. A. Bitz
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  2. C. Jordan
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  3. M. Di Ventra
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  4. K. A. Mäder
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  5. L. C. Andreani
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  6. J. F. Carlin
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  7. A. Rudra
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  8. J. L. Staehli
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Bitz, A., Jordan, C., Di Ventra, M. et al. Optical study on ultrathin InAs/InP single quantum wells. Il Nuovo Cimento D 17, 1367–1370 (1995). https://doi.org/10.1007/BF02457211

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  • DOI: https://doi.org/10.1007/BF02457211

PACS 73.20.Dx

PACS 78.66

PACS 01.30.Cc

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