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Modulation spectroscopy study of an InGaAs/GaAs-strained asymmetric triangular quantum well heterostructure

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Il Nuovo Cimento D

Summary

We have studied modulation spectra related to the intersubband transitions at 300 K and 20 K from an In GaAs/GaAs-strained asymmetric triangular quantum well (ATQW) heterostructures fabricated by molecular beam epitaxy using the digital alloy compositional grading (DACG) method. A careful analysis of the spectra has led to the identification of various excitonic transitions,mnh(1), between them-th conduction band state to then-th, heavy (light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope, function model, including the effects of strain provided a self-consistent verification that the DACG method produced the intended ATQW composition profile.

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Authors and Affiliations

  1. Department of Electronic engineering, National Taiwan Institute of Technology, 106, Taipei, Taiwan, PRC

    Y. S. Huang & W. S. Chi

  2. Physics Department, Brooklyn College of CUNY, 11210, Brooklyn, NY, USA

    H. Qiang & F. H. Pollak

  3. Department of Electrical, Engineering, Center for Solid State Electronics Research, Arizona State University, 85287, Tempe, AZ, USA

    D. L. Mathine & G. N. Maracas

Authors
  1. Y. S. Huang
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  2. W. S. Chi
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  3. H. Qiang
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  4. F. H. Pollak
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  5. D. L. Mathine
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  6. G. N. Maracas
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Huang, Y.S., Chi, W.S., Qiang, H. et al. Modulation spectroscopy study of an InGaAs/GaAs-strained asymmetric triangular quantum well heterostructure. Il Nuovo Cimento D 17, 1499–1503 (1995). https://doi.org/10.1007/BF02457233

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  • DOI: https://doi.org/10.1007/BF02457233

PACS 78.65

PACS 01.30.Cc

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