Abstract
GaAs current-injection negative differential resistance transistors using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy are presented. For p+ with a sheet concentration of 1013 cm−2, a negative differential resistance region is revealed for a base currentI B<100 µA. The peak to valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. WhenI B>=100 µA, the proposed device operates as a conventional bipolar transistor.
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Yarn, K.F., Wang, Y.H., Chang, C.Y. et al. Novel GaAs current-injection negative differential resistance transistor. J Mater Sci: Mater Electron 1, 72–74 (1990). https://doi.org/10.1007/BF00694909
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DOI: https://doi.org/10.1007/BF00694909