Ge0.2Si0.8 Quantum Well p-MOSFETs with very thin gate oxides of 5 nm, 2.5 nm cap-layer and an optional Boron doped delta layer fabricated in a standard 0.6 Μm CMOS process have been analysed by C-V and I-V measurements at different temperatures. The maximum low field hole mobility calculated from drain conductance was increased by 70%; from 67 cm2/Vs for a reference Silicon epi transistor to 115 cm2/Vs at 300 K and by 100%; from 110 cm2/Vs to 220 cm2/Vs at 98 K. These values were obtained at relatively high doping concentrations in the channel, the mobile channel charge was directly obtained from high and low frequency C-V curves. The influence of the net doping density in the channel region on the device characteristics is demonstrated. In the high electric field region the drain current in the saturation region was improved by 20%; for the same threshold voltage.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. MANKU, J. M. MCGREGOR, A. NATHAN, D. J. ROULSTON, J.-P. NOEL and D. C. HOUGHTON, Drift Hole Mobility in Strained and Unstrained Doped Si1−xGex Alloys, IEEE Trans. E1. Dev, vol. 40 (1993) p. 1990.
P. M. GARONE, V. VENKATARAMAN and J. C. STURM, Hole Confinement in MOS-Gated GexSi1−x/Si Heterostructures, IEEE Electron Dev. Lett. vol. 12 (1991) p. 230.
S. VERDONCKT-VANDEBROEK, E. F. CRABBE, B. S. MEYERSON, D. L. HARAME, P. J. RESTLE, J. M. C. STORK and J. B. JOHNSON, SiGe-Channel Heterojunction p-MOSFETs, IEEE Trans. E1. Dev. vol. 41 (1994) p. 90.
V. P. KESAN, S. SUBBANNA, P. J. RESTLE, M. J. TEJWANI, J. M. AITKEN, S. S. IYER and J. A. OTT, High Performance 0.25 Μm p-MOSFETs with Silicon-Germanium Channels for 300 K and 77 K Operation, IEDM Tech. Dig. (1991) p. 25.
S. VERDONCKT-VANDEBROEK, E. F. CRABBE, B. S. MEYERSON, D. L. HARAME, P. J. RESTLE, J. M. C. STORK, A. C. MEGDANIS, C. L. STANIS, A. A. BRIGHT, G. KROESEN and A. C. WARREN, Graded SiGe-Channel Modulation-Doped P-MOSFETs, VLSI Technol. (1991) p. 105.
P. M. GARONE, V. VENKATARAMAN and J. C. STURM, Hole Mobility Enhancement in MOS-Gated GexSi1−x/Si Heterostructure Inversion Layers, IEEE E1. Dev. Lett., vol. 13 (1992) p. 56.
K. R. HOFMANN, Charge control in SiGe Quantum-Well MOSFETs and MODFETs, Mat. Res. Soc. Symp. Proc. vol. 220 (1991) p. 457.
T. VOGELSANG, F. HOFMANN, H. SCHäFER, L. RISCH and K. HOFMANN, “Modelling and Fabrication of a p-Channel SiGe-MOSFET with Very High Mobility and Trans-conductance”, Ext. Abstracts of the 1994 SSDM, p. 877.
F. HOFMANN, H. SCHäFER, T. VOGELSANG and L. RISCH, “A 0.4 Μm Quantum Well P-Channel MOSFET With High Current”, Proceedings ESSDERC 94, p. 489.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Weidner, JO., Hofmann, K.R., Hofmann, F. et al. Characterization of SiGe quantum-well p-channel MOSFETs. J Mater Sci: Mater Electron 6, 325–329 (1995). https://doi.org/10.1007/BF00125887
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00125887