Abstract
The non-linear electrical properties of CoO-doped and Nb2O5-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall
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Pianaro, S.A., Bueno, P.R., Olivi, P. et al. Electrical properties of the SnO2-based varistor. Journal of Materials Science: Materials in Electronics 9, 159–165 (1998). https://doi.org/10.1023/A:1008821808693
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DOI: https://doi.org/10.1023/A:1008821808693