Abstract
Addition of a trapping layer to an SIS junction improves its performance as an X-ray detector. In this article X-ray induced pulse height and decay time spectra will be presented as a function of bias voltage. These measurements are in good agreement with a description based on the time constants for trapping, excitation and tunneling calculated by means of a model for proximity layers developed by Golubov et al..1,2The interpretation of the data doesn't require an initial fast loss process for the created quasi-particles as discussed by Van Vechten.3
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On leave from Department of Physics, Slovak Technical University, Ilkovicova 3, 812-19, Bratislava, Slovakia
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le Grand, J.B., Bruijn, M.P., Frericks, M. et al. Superconductive junctions with trappinglayers for the detection of X-rays. J Low Temp Phys 93, 573–580 (1993). https://doi.org/10.1007/BF00693478
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DOI: https://doi.org/10.1007/BF00693478