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Spin Gap Characteristic of Y(Ba1−xGdx)2Cu3O7−δ

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Abstract

Y(Ba1−x Gd x )2Cu3O7−δ compounds with x = 0 ∼ 0.15 are prepared using the solid reaction technique. With structure analysis by Rietveld refinement of x-ray diffraction, we find that Gd3+ ions prefer to occupy Y sites within lighter doping x ≤ 0.08 due to ion size effects, then begin partially to occupy Ba sites with doping content increasing, which gives vital influence on superconductivity and spin-gap properties. The magnetic doping effects of Gd3+ ions on spin-gap properties are investigated in detail by contrast of the distinguished behaviors between T* and T c, indicating that spin-gap temperature is not completely determined by the carrier density, but strongly dependent on the strength of interplane antiferromagnetic coupling. Finally, we propose an expression of in-plane resistivity dependent on the maximal width of spin-gap Δ0 to derive their values for different samples, which almost keep constant with the increase of Gd doping contents.

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Authors and Affiliations

  1. Department of Physics and Laboratory of Microstructure of Solid States, Nanjing University, Nanjing, 210093, China

    F. Wang, J. Lin, X. N. Xu, L. K. Xu, X. S. Wu, X. Jin & S. S. Jiang

  2. Department of Physics, Qufu Normal University, Qufu, 273165, China

    F. Wang

  3. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China

    L. J. Shen & C. C. Lam

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  1. F. Wang
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Wang, F., Lin, J., Xu, X.N. et al. Spin Gap Characteristic of Y(Ba1−xGdx)2Cu3O7−δ. Journal of Superconductivity 13, 393–400 (2000). https://doi.org/10.1023/A:1007746824022

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