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4×8 optoelectronic matrix switch equipment using InGaAsP/InP heterojunction switching photodiodes

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Abstract

A four input-port and an eight output-port optoelectronic matrix switch using InGaAsP/InP hetero-junction switching photodiodes was fabricated and its characteristics studied. The characteristics of the broadband switching equipment, as well as those of individual components, such as the switching photodiodes, InGaAsP/InP semiconductor lasers, eight-port optical dividers and receiver circuits, are discussed from the viewpoint of analogue signal switching. The signal-to-noise ratio attained is more than 40dB for a 30MHz bandwidth television signal. Differential gain and differential phase are less than 2% and 2°, respectively, isolation is higher than 80 dB. Crosstalk between adjacent channels is suppressed below-60 dB over the band between d.c. and 100 MHz by a simple metallic shield at the input and output electric circuits.

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Author notes

  1. N. Uesugi

    Present address: Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, 319-11, Ibaraki, Japan

Authors and Affiliations

  1. Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, 180, Tokyo, Japan

    N. Uesugi, S. Machida & T. Kimura

Authors
  1. N. Uesugi
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  2. S. Machida
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  3. T. Kimura
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Uesugi, N., Machida, S. & Kimura, T. 4×8 optoelectronic matrix switch equipment using InGaAsP/InP heterojunction switching photodiodes. Opt Quant Electron 15, 217–224 (1983). https://doi.org/10.1007/BF00619931

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  • DOI: https://doi.org/10.1007/BF00619931

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