Abstract
A violation of the polarization selection rules for Raman scattering is observed in porous silicon. This effect is caused by a weak disorientation of the quasi-one-dimensional silicon wires, with the crystal structure of the wires themselves and the macroscopic homogeneity of the material in optical experiments remaining intact.
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Pis’ma Zh. Éksp. Teor. Fiz. 67, No. 2, 95–100 (25 January 1998)