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Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir

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Abstract

The quantization of the Hall resistivity ρxy in the form of plateaus in the dependence of ρxy on the magnetic field B is observed in the semiconductors Bi2Te3 and Sb2Te3; the minima of the transverse magnetoresistivity ρxx correspond to the start of the plateaus. The quantization of ρxy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band with a much higher current-carrier effective mass serves as the reservoir.

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Pis’ma Zh. Éksp. Teor. Fiz. 70, No. 11, 754–758 (10 December 1999)

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Kul’bachinskii, V.A., Kaminskii, A.Y., Miyajima, N. et al. Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir. Jetp Lett. 70, 767–771 (1999). https://doi.org/10.1134/1.568260

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  • DOI: https://doi.org/10.1134/1.568260

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