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C-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7−δ /SrTiO3 and NdGaO3

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Abstract

Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7−δ /(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7−δ /(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. A. Boikov, I. P. Pronin & T. A. Shaplygina

  2. Physics Department, Chalmers University of Technology, S-41296, Göteborg, Sweden

    Z. G. Ivanov & T. Claeson

  3. Institute of Chemical Physics, University of Latvia, 1586, Riga, Latvia

    D. Érts

Authors
  1. Yu. A. Boikov
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  2. I. P. Pronin
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  3. T. A. Shaplygina
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  4. Z. G. Ivanov
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  5. T. Claeson
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  6. D. Érts
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 39, 683–686 (April 1997)

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Boikov, Y.A., Pronin, I.P., Shaplygina, T.A. et al. C-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7−δ /SrTiO3 and NdGaO3 . Phys. Solid State 39, 598–601 (1997). https://doi.org/10.1134/1.1130149

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  • DOI: https://doi.org/10.1134/1.1130149

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