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YBa2Cu3O7−δ /CeO2 heterostructures on sapphire R-plane

  • Metals. Superconductors
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Abstract

(001)YBa2Cu3O7−δ epitaxial films were prepared by laser ablation on \((1\bar 102)Al_2 O_3 \) surface. A thin (001)CeO2 or (111)CeO2 buffer layer was deposited between the substrate and the superconductor film to reduce their chemical interaction. In the initial stages of CeO2 buffer formation, its orientation depended strongly on the intensity of cerium ion interaction with oxygen. Epitaxial growth of (001)YBa2Cu3O7−δ films was achieved both on \((001)CeO_2 //(1\bar 102)Al_2 O_3 \) and \((111)CeO_2 //(1\bar 102)Al_2 O_3 \). The T c temperature of epitaxial (001)YBa2Cu3O7−δ films was within 88–90 K, and the current J c at 77 K was in excess of 106 A/cm−2.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. A. Boikov

  2. Physics Department, Chalmers Institute of Technology, S-41296, Göteborg, Sweden

    T. Claeson

  3. Institute of Chemical Physics, Latvia University, 1586, Riga, Latvia

    D. Érts

Authors
  1. Yu. A. Boikov
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  2. T. Claeson
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  3. D. Érts
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 205–208 (February 1998)

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Boikov, Y.A., Claeson, T. & Érts, D. YBa2Cu3O7−δ /CeO2 heterostructures on sapphire R-plane. Phys. Solid State 40, 183–186 (1998). https://doi.org/10.1134/1.1130267

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  • DOI: https://doi.org/10.1134/1.1130267

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