Abstract
A study is reported of the reflectance and low-temperature photoluminescence (PL) spectra of ZnTe films grown by molecular-beam epitaxy (MBE) on GaAs substrates [(100) orientation, 3° deflection toward 〈110〉]. It is shown that the strain-induced splitting of the free-exciton energy level (ΔE ex) does not depend on ZnTe film thickness within the 1–5.7 µm range and is due to biaxial in-plane film tension. The stresses are primarily determined by the difference between the thermal expansion coefficients of the film and the substrate. It is also shown that the residual stresses originating from incomplete relaxation of the film lattice parameter to its equilibrium value at the growth temperature likewise provide a certain contribution. The position of the spectral line of an exciton bound to a neutral acceptor (As) is well approximated in terms of the present models, taking into account the stresses calculated using the value of ΔE ex.
Similar content being viewed by others
References
A. M. Glass, K. Tai, R. B. Bylsma, et al., Appl. Phys. Lett. 53(10), 834 (1988).
V. S. Bagaev, V. V. Zaitsev, V. V. Kalinin, et al., Pis’ma Zh. Éksp. Teor. Fiz. 58(2), 82 (1993).
V. S. Bagaev, V. V. Zaitsev, V. V. Kalinin, et al., Solid State Commun. 88(10), 777 (1993).
S. L. Zhang, Y. T. Hou, M. Y. Shen, et al., Phys. Rev. B 47(19), 12937 (1993).
V. S. Bagaev, V. V. Zaitsev, V. V. Kalinin, et al., Izv. Akad. Nauk, Ser. Fiz. 58(7), 97 (1994).
J. Cibert, Y. Gobil, Le Si Dang, et al., Appl. Phys. Lett. 56(3), 292 (1990).
V. S. Bagaev, V. V. Zaitsev, V. V. Kalinin, et al., Fiz. Tverd. Tela (S.-Peterburg) 38(6), 1728 (1996).
G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, M., 1972; Wiley, New York, 1974).
Y. Zhang, B. J. Skromme, and F. S. Turco-Sandroff, Phys. Rev. B 46(7), 3872 (1992).
H. Tatsuoka, H. Kuwabara, Y. Nakanishi, et al., J. Appl. Phys. 67(11), 6860 (1990).
H. Tatsuoka, H. Kuwabara, Y. Nakanishi, et al., J. Cryst. Growth 117(1–4), 554 (1992).
T. Itoh, K. Shinone, N. Katagiri, et al., J. Cryst. Growth 117(1–4), 835 (1992).
K. Shahzad, Phys. Rev. B 38(12), 8309 (1988).
K. Ohkawa, T. Mitsuyu, and O. Yamazaki, Phys. Rev. B 38(17), 12465 (1988).
D. J. Olego, K. Shahzad, J. Petruzzello, et al., Phys. Rev. B 36(14), 7674 (1987).
Numerical Data and Functional Relationships in Science and Technology, Ed. by K.-H. Hellwege, Landolt-Bornstein, New Series (Springer, Berlin, 1982), vol. 17, Parts a and b.
S. I. Novikova, Thermal Expansion of Solids (Nauka, M., 1974).
W. Wardzynski, M. Giriat, Szymczak, et al., Phys. Status Solidi B 49(1), 71 (1972).
J. Calatayud, J. Allegre, H. Mattieu, et al., Phys. Rev. B 47(15), 9684 (1993).
Le Si Dang, J. Cibert, Y. Gobil, et al., Appl. Phys. Lett. 55(3), 235 (1989).
G. Kudlek, N. Presser, J. Gutowski, et al., Semicond. Sci. Technol. 6(9A), A90 (1991).
J. Gutowski, Semicond. Sci. Technol. 6(9A), A51 (1991).
K. Kumazaki, F. Iida, K. Ohno, et al., J. Cryst. Growth 117(1–4), 285 (1992).
H. P. Wagner, S. Lankes, K. Wolf, et al., J. Cryst. Growth 117(1–4), 303 (1992).
G. Kudlek, N. Presser, J. Gutowski, et al., J. Cryst. Growth 117(1–4), 290 (1992).
G. E. Pikus and E. L. Ivchenko, in Excitons, Modern Problems in Condensed Matter Sciences (Nauka, Moscow, 1985), p. 148.
D. E. Cooper and P. R. Newman, Phys. Rev. B 39(11), 7431 (1989).
Y. Oka and M. Cardona, Solid State Commun. 30(4), 447 (1979).
H. Venghaus and P. J. Dean, Phys. Rev. B 21(4), 1596 (1980).
H. Mathieu, J. Camassel, and F. Ben Chekroun, Phys. Rev. B 29(6), 3438 (1984).
F. Dal’Bo, G. Lentz, N. Magnea, et al., J. Appl. Phys. 66(3), 1338 (1989).
V. D. Kulakovskii, G. E. Pikus, and V. B. Timofeev, Usp. Fiz. Nauk 135(2), 237 (1981).
M. Schmidt, Phys. Status Solidi B 79(2), 533 (1977).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 42, No. 2, 2000, pp. 230–234.
Original Russian Text Copyright © 2000 by Za\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)tsev, Bagaev, Onishchenko, Sadof’ev.
Rights and permissions
About this article
Cite this article
Zaitsev, V.V., Bagaev, V.S., Onishchenko, E.E. et al. Investigation of free and bound excitons in strained ZnTe films grown by MBE on GaAs(100) substrates. Phys. Solid State 42, 236–240 (2000). https://doi.org/10.1134/1.1131152
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1131152