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Photosensitivity of porous silicon-silicon heterostructures

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Abstract

Data from experimental studies of the photoelectric properties of heterostructures of porous and single-crystal silicon are presented. Rectifying heterostructures with photosensitivities of up to 1 mA/W at 300 K in the spectral range 1.2–2.3 eV are obtained. Oscillations in the photocurrent due to interference of the light in the porous silicon layers are observed. The refractive index of porous silicon is estimated. The polarization dependence of the photosensitivity of the heterostructures is studied.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    E. V. Astrova, A. A. Lebedev, A. D. Remenyuk & Yu. V. Rud’

  2. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    V. Yu. Rud’

Authors
  1. E. V. Astrova
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  2. A. A. Lebedev
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  3. A. D. Remenyuk
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  4. Yu. V. Rud’
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  5. V. Yu. Rud’
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Fiz. Tekh. Poluprovodn. 31, 223–225 (February 1997)

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Astrova, E.V., Lebedev, A.A., Remenyuk, A.D. et al. Photosensitivity of porous silicon-silicon heterostructures. Semiconductors 31, 121–123 (1997). https://doi.org/10.1134/1.1187137

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  • DOI: https://doi.org/10.1134/1.1187137

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