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Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing

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Abstract

Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    E. M. Verbitskaya, V. K. Eremin & A. M. Ivanov

  2. Brookhaven National Laboratory, Upton, New York, 11973, USA

    Z. Li

  3. Rossendorf Research Center, Institute for the Physics of Ion Beams and Material Science, D-01314, Dresden, Germany

    B. Schmidt

Authors
  1. E. M. Verbitskaya
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  2. V. K. Eremin
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  3. A. M. Ivanov
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  4. Z. Li
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  5. B. Schmidt
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Additional information

Fiz. Tekh. Poluprovodn. 31, 299–304 (February 1997)

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Verbitskaya, E.M., Eremin, V.K., Ivanov, A.M. et al. Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing. Semiconductors 31, 189–193 (1997). https://doi.org/10.1134/1.1187105

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  • DOI: https://doi.org/10.1134/1.1187105

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