Abstract
Equations are derived in parametric form for calculating the steady-state lux-ampere characteristics of photoresistors with an arbitrary concentration of deep levels at arbitrary excitation intensity. The conditions underlying the formation of the sublinear and superlinear segments of the lux-ampere curve as a function of the excitation intensity and the concentration and parameters of the deep levels can be determined from calculations according to the derived equations.
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References
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Fiz. Tekh. Poluprovodn. 31, 983–986 (August 1997)
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Lebedev, A.A. Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities. Semiconductors 31, 838–840 (1997). https://doi.org/10.1134/1.1187238
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DOI: https://doi.org/10.1134/1.1187238